NPT1007 NPT1007 page 1 features ? optimized for narrowband and broadband applications from from dc C 1200mhz ? 200w p 3db cw power at 900mhz in quadrature combined or push-pull confguration ? 90w cw power from 500-1000mhz in application design ad-014 ? high effciency from 14v to 28v ? 1.0 c/w r th with maximum t j rating of 200 c ? robust up to 10:1 vswr mismatch at all angles with no device degradation ? subject to ear99 export control dc C 1200 mhz 14 C 28 volt gan hemt rf specifcations (cw): v ds = 28v, i dq = 1400ma 1 , frequency = 900mhz, t a = 25c, measured in nitronex quadrature combined test fixture 2 . gallium nitride 28v, 200w rf power transistor built using the sigantic ? nrf1 process - a proprietary gan-on-silicon technology typical 2-tone performance: v ds = 28v, i dq = 1400ma 1 , frequency = 900mhz, tone spacing = 1mhz, t a = 25c measured in nitronex quadrature combined test fixture 2 . symbol parameter typ units p 3db,pep peak envelope power at 3db gain compression 53.4 dbm p 1db,pep peak envelope power at 1db gain compression 52.6 dbm p imd3 peak envelope power at -35dbc imd3 50.8 dbm symbol parameter min typ max units p 3db average output power at 3db gain compression 52.0 53.0 - dbm g ss small signal gain 17. 3 18.3 - db h drain effciency at 3db gain compression 2 1 57 63 - % vswr 10:1 vswr at all phase angles no change in device performance note 1: 700ma per transistor. each gate should be biased independently to set desired i dq . note 2: includes ~ 0.2 db quadrature combiner loss. note 1: 700ma per transistor. each gate should be biased independently to set desired i dq . note 2: includes ~ 0.2 db quadrature combiner loss. nds-012 rev. 3, april 2013
NPT1007 NPT1007 page 2 absolute maximum ratings: not simultaneous, per transistor, t a = 25c unless otherwise noted symbol parameter min typ max units off characteristics v bds drain-source breakdown voltage (v gs = -8v, i d = 36ma) 100 - - v i dlk drain-source leakage current (v gs = -8v, v ds = 60v) - 9 18 ma on characteristics v t gate threshold voltage (v ds = 28v, i d = 36ma) -2.3 -1.8 -1.3 v v gsq gate quiescent voltage (v ds = 28v, i d = 700ma) -2.0 -1.5 -1.0 v r on on resistance (v gs = 2v, i d = 270ma) - 0.13 0.14 w i d,max drain current (v ds = 7v pulsed, 300 m s pulse width, 0.2% duty cycle) 19.0 20.5 - a symbol parameter max units v ds drain-source voltage 100 v v gs gate-source voltage -10 to 3 v i g gate current 180 ma p t total device power dissipation (derated above 25c), both transistors on 175 w q jc thermal resistance (junction-to-case), composite for both transistors on, t j = 180c 1.0 c/w thermal resistance (junction-to-case), one transistor on, one off, t j = 180c 1.8 t stg storage temperature range -65 to 150 c t j operating junction temperature 200 c hbm human body model esd rating (per jesd22-a114) 1c (>1000v) mm machine model esd rating (per jesd22-a115) a (>100v) cdm charge device model esd rating (per jesd22-c101) iv (>4000v) dc specifcations: per transistor, t a = 25c nds-012 rev. 3, april 2013
NPT1007 NPT1007 page 3 table 1: optimum source and load impedances for cw gain, drain effciency, and output power performance frequency (mhz) z s (w) z l (w) p sat (dbm) g ss (db) drain effciency @ p sat (%) 500 1.4 + j0.1 2.0 + j0.5 50.0 24.0 70% 900 1.6 - j1.5 2.3 - j1.5 50.0 18.5 74% 1200 1.8 - j2.7 3.5 - j2.8 49.5 16.5 62% figure 1 - optimum impedances for cw performance load-pull data, reference plane at device leads v ds =28v, i dq =700ma, one single-ended transistor, t a =25c unless otherwise noted figure 2 - load-pull contours, 500mhz, p in = 25dbm, z s = 1.4 + j0.1 w figure 3 - load-pull contours, 900mhz, p in = 30dbm, z s = 1.6 - j1.5 w figure 4 - load-pull contours, 1200mhz, p in = 32dbm, z s = 1.8 - j2.7 w 49.5dbm 73% 49.5dbm 67% 48.5dbm 61% nds-012 rev. 3, april 2013
NPT1007 NPT1007 page 4 load-pull data per device lead, reference plane at device leads v ds =28v, i dq =700ma, one single-ended transistor, t a =25c unless otherwise noted. figure 5 - typic al cw per for manc e, over frequency figure 6 - typical cw performance over frequency figure 7 - typical pulsed performance, frequency = 900mhz, duty cycle = 10% figure 8 - typical cw performance at v ds = 20v frequency = 900mhz nds-012 rev. 3, april 2013
NPT1007 NPT1007 page 5 typical device characteristics v ds =28v, i dq =700ma, one single-ended transistor, t a =25c unless otherwise noted. figure 9 - ty pic al i m d3 per for manc e, frequency = 900mhz, tone spacing = 1mhz figure 10 - typical cw performance over temperature, frequency = 900mhz figure 11 - quiescient gate voltage (v gsq ) required to reach i dq over temperature figure 12 - mttf of nrf1 devices as a function of junction temperature nitronex quadrature combined test fixture v ds =28v, i dq =1400ma, t a =25c unless otherwise noted. nds-012 rev. 3, april 2013
NPT1007 NPT1007 page 6 figure 13 - ac780b-4 metal-ceramic package dimensions and pinout (all dimensions are in inches [mm]) ordering information 1 part number description NPT1007b NPT1007 in ac780b-4 metal-ceramic bolt-down package 1: to fnd a nitronex contact in your area, visit our website at http://www.nitronex.com nds-012 rev. 3, april 2013
NPT1007 NPT1007 page 7 nitronex, llc 2305 presidential drive durham, nc 27703 usa +1.919.807.9100 (telephone) +1.919.807.9200 (fax) info@nitronex.com www.nitronex.com additional information this part is lead-free and is compliant with the rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). important notice nitronex, llc reserves the right to make corrections, modifcations, enhancements, improvements and other changes to its products and services at any time and to discontinue any product or service without notice. customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. all products are sold subject to nitronex terms and conditions of sale supplied at the time of order acknowledgment. the latest information from nitronex can be found either by calling nitronex at 1-919-807-9100 or visiting our website at www.nitronex.com. nitronex warrants performance of its packaged semiconductor or die to the specifcations applicable at the time of sale in accordance with nitronex standard warranty. testing and other quality control techniques are used to the extent nitronex deems necessary to support the warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. nitronex assumes no liability for applications assistance or customer product design. customers are responsible for their product and applications using nitronex semiconductor products or services. to minimize the risks associated with customer products and applications, customers should provide adequate design and operating safeguards. nitronex does not warrant or represent that any license, either express or implied, is granted under any nitronex patent right, copyright, mask work right, or other nitronex intellectual property right relating to any combination, machine or process in which nitronex products or services are used. reproduction of information in nitronex data sheets is permitted if and only if said reproduction does not alter any of the information and is accompanied by all associated warranties, conditions, limitations and notices. any alteration of the contained information invalidates all warranties and nitronex is not responsible or liable for any such statements. nitronex products are not intended or authorized for use in life support systems, including but not limited to surgical implants into the body or any other application intended to support or sustain life. should buyer purchase or use nitronex, llc products for any such unintended or unauthorized application, buyer shall indemnify and hold nitronex, llc, its of f cers, employees, subsidiaries, affliates, distributors, and its successors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, notwithstanding if such claim alleges that nitronex was negligent regarding the design or manufacture of said products. nitronex and the nitronex logo are registered trademarks of nitronex, llc. all other product or service names are the property of their respective owners. ? nitronex, llc 2012. all rights reserved. nds-012 rev. 3, april 2013
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